s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t n- ch an n el m osf et 2s k3424-zj f e a tu r e s v d s s = 3 0 v i d = 4 8 a ( v g s = 1 0 v ) r d s ( o n ) 1 1 . 5 m ( v g s = 1 0 v ) r d s ( o n ) 1 7 m ( v g s = 4 . 5 v ) l o w g a t e c h a r g e a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s 3 0 g a t e - s o u r c e v o l t a g e v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t i d 4 8 p u l s e d d r a i n c u r r e n t ( n o t e . 1 ) i d m 1 9 2 5 0 1 . 5 j u n c t i o n t e m p e r a t u r e t j 1 5 0 s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 a v p d w p o w e r d i s s i p a t i o n n o t e . 1 : p w 1 0 u s , d u t y c y c l e 1 % source body diode gate protection diode gate drain t c = 2 5 t a = 2 5 t c = 2 5
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t t y p i c a l ch a r a c te r i s i ti c s p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 3 0 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = 3 0 v , v g s = 0 v 1 0 u a g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 u a g a t e t o s o u r c e c u t - o f f v o l t a g e v g s ( o f f ) v d s = 1 0 v , i d = 1 m a 1 . 5 2 . 5 v v g s = 1 0 v , i d = 2 4 a 1 1 . 5 v g s = 4 . 5 v , i d = 2 4 a 1 7 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 1 0 v , i d = 2 4 a 1 3 s i n p u t c a p a c i t a n c e c i ss 1 9 0 0 o u t p u t c a p a c i t a n c e c o ss 5 8 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 2 7 0 t o t a l g a t e c h a r g e q g 3 4 g a t e s o u r c e c h a r g e q g s 6 . 4 g a t e d r a i n c h a r g e q g d 9 . 1 t u r n - o n d e l a y t i m e t d ( o n ) 1 4 t u r n - o n r i s e t i m e t r 1 3 t u r n - o f f d e l a y t i m e t d ( o f f ) 6 1 t u r n - o f f f a l l t i m e t f 2 2 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 3 4 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 2 6 n c d i o d e f o r w a r d v o l t a g e v s d i f = 4 8 a , v g s = 0 v 1 v s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) m n s v d d = 1 5 v , i d = 2 4 a , v g s ( o n ) = 1 0 v , r g = 1 0 v g s = 0 v , v d s = 1 0 v , f = 1 m h z v g s = 1 0 v , v d s = 2 4 v , i d = 4 8 a p f n c i f = 4 8 a , v g s = 0 , d i / d t = 1 0 0 a / s t y p i c a l ch a r a c te r i s i ti c s drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 0 2 4 3 100 200 150 1 pulsed v gs =10 v 50 7.0 v 4.5 v forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a pulsed 1 2 3 4 5 6 v ds = 10 v 10 1 0.1 100 1000 t ch = 40?c 25?c 25?c 75?c 125?c 150?c n- ch an n el m osf et 2s k3424-zj
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t t y p i c a l ch a r a c te r i s i ti c s gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cut-off voltage - v v ds = 10 v i d = 1 ma 1.0 1.5 0.5 2.0 2.5 3.0 50 0 50 100 150 0 | y fs | - forward transfer admittance - s forward transfer admittance vs. drain current i d - drain current - a pulsed v ds = 10 v 10 1 100 0.1 0.01 0.1 1 10 100 t ch = 150?c 75 ?c 25 ?c 40?c drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m 0 0 10 5 15 20 15 20 5 10 pulsed i d = 48 a 24 a 10 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m 10 10 1 0.1 20 30 1000 100 pulsed 0 v gs = 4.5 v 7.0 v 10 v drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - m 0 50 4 0 50 100 150 8 16 20 12 7.0 v 10 v v gs = 4.5 v i d = 24 a source to drain diode forward voltage 1 i sd - diode forward current - a 0 1.5 v sd - source to drain voltage - v 0.5 pulsed 0.1 0.01 1 10 100 1000 0 v 4.5 v v gs = 10 v n- ch an n el m osf et 2s k3424-zj
s m d ty p e w w w . k e x i n . c o m . c n 4 m osf e t . t y p i c a l ch a r a c te r i s i ti c s capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 0.1 1 0 0 10 0 0 100 0 0 1 10 100 v gs = 0 v f = 1 mhz c oss c rss c iss switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 1 1 0.1 100 1000 10 100 t f t r t d(on) t d(off) v d d = 1 5 v v g s = 1 0 v r g = 1 0 reverse recovery time vs. diode forward current i sd - diode forward current - a t rr - reverse recovery time - ns di/dt = 100 a / s v gs = 0 v 1 0.1 10 1 10 100 1000 100 dynamic input/output characteristics v gs - gate to source voltage - v q g - gate charge - nc v ds - drain to source voltage - v 0 0 10 20 30 40 10 5 15 20 25 30 4 0 8 v dd = 24 v 15 v 6 v v ds 12 v gs i d = 48 a derating factor of forward bias safe operating area t ch - channel temperature - ?c dt - percentage of rated power - % 0 40 20 60 100 140 80 120 160 0 20 40 60 80 100 t c - case temperature - ?c p t - total power dissipation - w 0 0 80 20 40 60 100 140 120 160 total power dissipation vs. case temperature 10 20 30 40 60 50 70 n- ch an n el m osf et 2s k3424-zj
s m d ty p e w w w . k e x i n . c o m . c n 5 m os f e t t y p i c a l ch a r a c te r i s i ti c s forward bias safe operating area 1 10 100 i d - drain current - a 0.1 v ds - drain to source voltage - v 100 1000 10 1 p o w e r dis s ip a t io n lim i t e d 1 0 0 s 1 0 m s 3 0 0 s 1 m s 3 m s p w = 1 0 s d c i d(d c ) i d(puls e ) t c = 2 5 ? c s ingl e p ul s e r ds(on) limited (@v gs = 10 v) pw - pulse width - sec transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ?c/ w 1 0 0 . 0 1 0 . 1 1 1 0 0 10 0 0 1 m 10 m 100 m 1 10 100 1000 single pulse 10 100 r th(ch-c) = 2.5?c/ w r th(ch-a) = 83.3?c/ w n- ch an n el m osf et 2s k3424-zj
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